Čína ALD výrobca, dodávateľ, továreň


Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).


Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.


Atomic layer deposition process:


Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.


Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.


Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.



1st Half-CyclePurge2nd Half-CyclePurge



Highlights of Atomic Layer Deposition (ALD):


1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes


Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.


Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:


PVD technology
CVD technology
ALD technology
Faster deposition rate
Average deposition rate
Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision

Medium film thickness

(depends on the number of reaction cycles)

Atomic-level film thickness
The coating has a single directionality
The coating has a single directionality
Good uniformity of large-area film thickness
Poor thickness uniformity
Average step coverage
Best step coverage
Poor step coverage
\ Dense film without pinholes


Advantages of ALD technology compared to CVD technology (Source: ASM)








Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.



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Prijímač ALD

Prijímač ALD

VeTek Semiconductor je profesionálny výrobca ALD Susceptor, CVD SiC povlak, CVD TAC COATING grafitový základ v Číne. Vetek Semiconductor spoločne vyvinuli a vyrobili planétové základne ALD potiahnuté SiC s výrobcami systémov ALD, aby splnili vysoké požiadavky procesu ALD a rovnomerne rozložili prúd vzduchu na substrát. Tešíme sa na ďalšiu spoluprácu s Vami.

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SiC povlak ALD susceptor

SiC povlak ALD susceptor

Ako profesionálny výrobca a dodávateľ ALD susceptora s povlakom SiC v Číne je susceptor ALD povlaku SiC spoločnosti VeTek Semiconductor podporným komponentom špecificky používaným v procese nanášania atómovej vrstvy (ALD). Hrá kľúčovú úlohu v zariadení ALD, pričom zabezpečuje jednotnosť a presnosť procesu nanášania. Veríme, že naše produkty ALD Planetary Susceptor vám môžu priniesť vysokokvalitné produktové riešenia.

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Planetárny susceptor ALD

Planetárny susceptor ALD

Proces ALD, znamená proces epitaxie atómovej vrstvy. Výrobcovia systémov Vetek Semiconductor a ALD vyvinuli a vyrobili planetárne susceptory ALD potiahnuté SiC, ktoré spĺňajú vysoké požiadavky procesu ALD na rovnomerné rozloženie prúdu vzduchu po substráte. Vysoko čistý CVD SiC povlak Vetek Semiconductor zároveň zaisťuje čistotu procesu. Vitajte na diskusii o spolupráci s nami.

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Ako profesionálny výrobca a dodávateľ ALD v Číne máme vlastnú továreň. Či už potrebujete prispôsobené služby, ktoré spĺňajú špecifické potreby vášho regiónu, alebo si chcete kúpiť moderné a odolné ALD vyrobené v Číne, môžete nám zanechať správu.
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